The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 15, 2014
Filed:
Dec. 28, 2012
National Yunlin University of Science and Technology, Douliu, TW;
Jian-Yang Lin, Douliu, TW;
Ting-Jia Chen, Douliu, TW;
National Yunlin University of Science and Technology, Douliu,Yunlin County, TW;
Abstract
A method for manufacturing a junction plane of a solar cell through an aluminum induced crystallization method includes steps of: providing a substrate; forming an aluminum film layer on a surface of a first growth area on a back side of the substrate; forming an N-type amorphous silicon layer on a surface of the aluminum film layer and a surface of a second growth area on the back side of the substrate; performing a thermal treatment to allow aluminum to induce the N-type amorphous silicon layer to crystallize and form a P-type polycrystalline silicon layer, such that positions of the aluminum film layer and the P-type polycrystalline silicon layer are switched due to the thermal treatment to allow the P-type polycrystalline silicon layer to be formed between the aluminum film layer and the substrate to form a PN junction plane with the N-type amorphous silicon layer.