The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 15, 2014
Filed:
Sep. 13, 2012
Applicant:
Satoshi Komada, Osaka, JP;
Inventor:
Satoshi Komada, Osaka, JP;
Assignee:
Sharp Kabushiki Kaisha, Osaka-shi, Osaka, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/24 (2010.01);
U.S. Cl.
CPC ...
Abstract
A method of manufacturing a nitride semiconductor device includes the step of forming a second nitride semiconductor layer having an inclined facet by metal-organic chemical vapor deposition, in which a molar flow ratio of a group V element gas to a group III element gas that are supplied to a growth chamber of a metal-organic chemical vapor deposition growth apparatus is set at 240 or less.