The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 15, 2014
Filed:
Mar. 08, 2012
Applicants:
Kyoung-woo Lee, Hwaseong-si, KR;
Hong-jae Shin, Seoul, KR;
Woo-jin Jang, Seoul, KR;
Inventors:
Assignee:
Samsung Electronics Co., Ltd., Suwon-Si, Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/66 (2006.01);
U.S. Cl.
CPC ...
Abstract
Disclosed is a monitoring TEG for an etching process in a semiconductor device. The TEG includes an etch stopping layer on a substrate and a target layer to be etched provided on the etch stopping layer. The target layer to be etched includes a first opening portion formed by etching a portion of the target layer to be etched and a second opening portion formed by etching another portion of the target layer to be etched. The second opening portion has a smaller depth than the first opening portion. A depth of a partial contact hole formed by a first partial etching process may be measured.