The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 08, 2014

Filed:

Jun. 21, 2011
Applicants:

Kazuyoshi Hirose, Hamamatsu, JP;

Shinichi Furuta, Hamamatsu, JP;

Akiyoshi Watanabe, Hamamatsu, JP;

Takahiro Sugiyama, Hamamatsu, JP;

Kousuke Shibata, Hamamatsu, JP;

Yoshitaka Kurosaka, Hamamatsu, JP;

Susumu Noda, Kyoto, JP;

Inventors:

Kazuyoshi Hirose, Hamamatsu, JP;

Shinichi Furuta, Hamamatsu, JP;

Akiyoshi Watanabe, Hamamatsu, JP;

Takahiro Sugiyama, Hamamatsu, JP;

Kousuke Shibata, Hamamatsu, JP;

Yoshitaka Kurosaka, Hamamatsu, JP;

Susumu Noda, Kyoto, JP;

Assignees:

Hamamatsu Photonics K.K., Hamamatsu-shi, Shizuoka, JP;

Kyoto University, Kyoto-shi, Kyoto, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/183 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor surface light-emitting element of this invention is provided with a photonic crystal layerobtained by periodically forming a plurality of holes H in a basic layerA comprised of a first compound semiconductor of the zinc blend structure and growing embedded regionsB comprised of a second compound semiconductor of the zinc blend structure, in the holes H, and an active layerto supply light to the photonic crystal layer, in which a principal surface of the basic layerA is a (001) plane and in which side faces of each hole H have at least three different {100} facets.


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