The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 08, 2014
Filed:
Jun. 03, 2011
Luca Perniola, Noyarey, FR;
Stefania Braga, Ziano Piacentino, IT;
Luca Perniola, Noyarey, FR;
Stefania Braga, Ziano Piacentino, IT;
Abstract
A non-volatile memory cell including a resistivity change material configured to reversibly change state between at least two stable states having different electrical resistances and conformed such that transformation from one state to another is obtained by controlling the temperature increase or decrease of the resistivity change material, wherein the resistivity change material has an ohmic component Rdefined by the ratio between an increment in the programming voltage Vcausing an increment in a programming current I, wherein the resistivity change material has a non-ohmic component defined by a maintenance voltage Vsuch that Vis greater than zero when the programming voltage Ipasses through the resistivity change material (); and greater than an ohmic voltage equal to R×I.