The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 08, 2014
Filed:
Jul. 03, 2012
Moon Suk Jeon, Seoul, KR;
Jung-rin Woo, Seoul, KR;
Sang Hwa Jung, Ansan, KR;
Jung Hyun Kim, Uiwang, KR;
Young Kwon, Thousand Oaks, CA (US);
IL DO Jung, Seongnam, KR;
Moon Suk Jeon, Seoul, KR;
Jung-Rin Woo, Seoul, KR;
Sang Hwa Jung, Ansan, KR;
Jung Hyun Kim, Uiwang, KR;
Young Kwon, Thousand Oaks, CA (US);
Il Do Jung, Seongnam, KR;
Avago Technologies General IP (Singapore) Pte. Ltd., Singapore, SG;
Abstract
A power amplifier including a MOSFET including a source supplied with a first DC power, a gate connected to an RF input signal, and a drain connected to a power supply terminal of an RF power amplification unit; a supply voltage modulation control unit that determines a DC gate voltage of the MOSFET based on an envelope of the RF input signal; and a bypass circuit connected between the drain and the power supply terminal. The MOSFET outputs a second DC power via the drain and amplifies the RF input signal based on a third DC power substantially identical to a differential between the first and the second DC power, and also outputs an RF power via the drain. The bypass circuit receives and rectifies the RF power to supply a recycled DC power to the power supply terminal of the RF power amplification unit.