The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 08, 2014

Filed:

Mar. 22, 2010
Applicants:

Dong-kak Lee, Seoul, KR;

Sung-gil Kim, Seoul, KR;

Soo-jin Hong, Guri-si, KR;

Sun-ghil Lee, Yongin-si, KR;

Deok-hyung Lee, Seoul, KR;

Inventors:

Dong-kak Lee, Seoul, KR;

Sung-gil Kim, Seoul, KR;

Soo-jin Hong, Guri-si, KR;

Sun-ghil Lee, Yongin-si, KR;

Deok-hyung Lee, Seoul, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/108 (2006.01); H01L 23/48 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
Abstract

Provided are semiconductor devices including a semiconductor substrate, an insulating layer including a contact hole through which the semiconductor substrate is exposed, and a polysilicon layer filling the contact hole. The polysilicon layer is doped with impurities and includes an impurity-diffusion prevention layer. In the semiconductor devices, the impurities included in the polysilicon layer do not diffuse into the insulating layer and the semiconductor substrate due to the impurity-diffusion prevention layers.


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