The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 08, 2014
Filed:
Jun. 21, 2012
Yuzo Otsuru, Ora-gun, JP;
Yasuhiro Takeda, Ora-gun, JP;
Shigeyuki Sugihara, Ibi-gun, JP;
Shinya Inoue, Yokkaichi, JP;
Yuzo Otsuru, Ora-gun, JP;
Yasuhiro Takeda, Ora-gun, JP;
Shigeyuki Sugihara, Ibi-gun, JP;
Shinya Inoue, Yokkaichi, JP;
Semiconductor Components Industries, LLC, Phoenix, AZ (US);
Abstract
A semiconductor device equally turns on the parasitic bipolar transistors in the finger portions of the finger form source and drain electrodes when a surge voltage is applied, even with the P+ type contact layer surrounding the N+ type source layers and the N+ type drain layers connected to the finger form source and drain electrodes. A P+ type contact layer surrounds N+ type source layers and N+ type drain layers. Metal silicide layers are formed on the N+ type source layers, the N+ type drain layers, and a portion of the P+ type contact layer. Finger form source electrodes, finger form drain electrodes, and a P+ type contact electrode surrounding these finger form electrodes are formed, being connected to the metal silicide layers respectively through contact holes formed in an interlayer insulation film deposited on the metal silicide layers.