The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 08, 2014
Filed:
Aug. 01, 2013
Magnachip Semiconductor, Ltd., Cheongju-si, KR;
Jae-Han Cha, Cheongju-si, KR;
Kyung-Ho Lee, Cheongju-si, KR;
Sun-Goo Kim, Cheongju-si, KR;
Hyung-Suk Choi, Cheongju-si, KR;
Ju-Ho Kim, Cheongju-si, KR;
Jin-Young Chae, Cheongju-si, KR;
In-Taek Oh, Cheongju-si, KR;
MagnaChip Semiconductor, Ltd., Cheongju-si, KR;
Abstract
A semiconductor device includes a second conductive-type deep well configured above a substrate. The deep well includes an ion implantation region and a diffusion region. A first conductive-type first well is formed in the diffusion region. A gate electrode extends over portions of the ion implantation region and of the diffusion region, and partially overlaps the first well. The ion implantation region has a uniform impurity concentration whereas the impurity concentration of the diffusion region varies from being the highest concentration at the boundary interface between the ion implantation region and the diffusion region to being the lowest at the portion of the diffusion region that is the farthest away from the boundary interface.