The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 08, 2014
Filed:
Apr. 05, 2010
Applicant:
Shinichiro Yanagi, Tokyo, JP;
Inventor:
Shinichiro Yanagi, Tokyo, JP;
Assignee:
Renesas Electronics Corporation, Kanagawa, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
Abstract
There is provided a semiconductor device in which the degradation of electric characteristics can be inhibited. A semiconductor substrate has a main surface, and a trench in the main surface. A buried insulating film is buried in the trench. The trench has one wall surface and the other wall surface which oppose each other. A gate electrode layer is located over at least the buried insulating film. The trench has angular portions which are located between the main surface of at least either one of the one wall surface and the other wall and a bottom portion of the trench.