The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 08, 2014
Filed:
Jun. 18, 2012
Naoki Izumi, Kyoto, JP;
Naoki Izumi, Kyoto, JP;
Rohm Co., Ltd., Kyoto, JP;
Abstract
A semiconductor device includes a semiconductor layer with a trench dug downward from its surface, a source region formed on a surface layer portion adjacent to a first side of the trench in a prescribed direction, a drain region formed on the surface layer portion, adjacent to a second side of the trench opposite to the first side in the prescribed direction, a first insulating film on the bottom surface and the side surface of the trench, a floating gate stacked on the first insulating film and opposed to the bottom surface and the side surface of the trench through the first insulating film, a second insulating film formed on the floating gate, and a control gate at least partially embedded in the trench so that the portion embedded in the trench is opposed to the floating gate through the second insulating film.