The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8692295 B1

PDF
Full Text
Expired
Date of Patent:
Apr. 08, 2014

Filed:

Sep. 25, 2009
Applicants:

Rajesh D. Rajavel, Oak Park, CA (US);

Stephen Thomas, Iii, Redondo Beach, CA (US);

Inventors:

Rajesh D. Rajavel, Oak Park, CA (US);

Stephen Thomas, III, Redondo Beach, CA (US);

Assignee:

HRL Laboratories, LLC, Malibu, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/737 (2006.01);
U.S. Cl.
CPC ...
Abstract

A double heterojunction bipolar transistor on a substrate comprises a collector formed of InGaAsP, a base in contact with the collector, an emitter in contact with the base, and electrodes forming separate electrical contacts with each of the collector, base, and emitter, respectively. A device incorporates this transistor and an opto-electronic device optically coupled with the collector of the transistor to interact with light transmitted therethrough.


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Rajavel, Rajesh. (2014). Transistor with ingaasp collector region and integrated opto-electronic devices employing same (U.S. Patent No. 8692295). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8692295

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