The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 08, 2014
Filed:
Jan. 23, 2012
Hidekazu Umeda, Osaka, JP;
Tetsuzo Ueda, Osaka, JP;
Hidekazu Umeda, Osaka, JP;
Tetsuzo Ueda, Osaka, JP;
Panasonic Corporation, Osaka, JP;
Abstract
A semiconductor device includes: a substrate, a first nitride semiconductor layerS which includes a plurality of nitride semiconductor layers formed on the substrate, and has a channel region; a second semiconductor layerwhich is formed on the first nitride semiconductor layerS, and has a conductivity type opposite a conductivity type of the channel region; a conductive layer which is in contact with the second semiconductor layer, and includes a metal layeror a high carrier concentration semiconductor layer having a carrier concentration of 1×10cmor higher; an insulating layerformed on the conductive layer; a gate electrodeformed on the insulating layer; and a source electrodeand a drain electrodeformed to laterally sandwich the second semiconductor layer