The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 08, 2014
Filed:
Jul. 13, 2010
David B. Slater, Jr., Raleigh, NC (US);
Robert C. Glass, Chapel Hill, NC (US);
Charles M. Swoboda, Morrisville, NC (US);
Bernd Keller, Goleta, CA (US);
James Ibbetson, Goleta, CA (US);
Brian Thibeault, Santa Barbara, CA (US);
Eric J. Tarsa, Goleta, CA (US);
David B. Slater, Jr., Raleigh, NC (US);
Robert C. Glass, Chapel Hill, NC (US);
Charles M. Swoboda, Morrisville, NC (US);
Bernd Keller, Goleta, CA (US);
James Ibbetson, Goleta, CA (US);
Brian Thibeault, Santa Barbara, CA (US);
Eric J. Tarsa, Goleta, CA (US);
Cree, Inc., Durham, NC (US);
Abstract
Light emitting diodes include a diode region comprising a gallium nitride-based n-type layer, an active region and a gallium nitride-based p-type layer. A substrate is provided on the gallium nitride-based n-type layer and optically matched to the diode region. The substrate has a first face remote from the gallium nitride-based n-type layer, a second face adjacent the gallium nitride-based n-type layer and a sidewall therebetween. At least a portion of the sidewall is beveled, so as to extend oblique to the first and second faces. A reflector may be provided on the gallium nitride-based p-type layer opposite the substrate. Moreover, the diode region may be wider than the second face of the substrate and may include a mesa remote from the first face that is narrower than the first face and the second face.