The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 08, 2014
Filed:
Aug. 01, 2012
Taku Kinoshita, Kanagawa, JP;
Michiaki Murata, Kanagawa, JP;
Takashi Kondo, Kanagawa, JP;
Kazutaka Takeda, Kanagawa, JP;
Hideo Nakayama, Kanagawa, JP;
Taku Kinoshita, Kanagawa, JP;
Michiaki Murata, Kanagawa, JP;
Takashi Kondo, Kanagawa, JP;
Kazutaka Takeda, Kanagawa, JP;
Hideo Nakayama, Kanagawa, JP;
Fuji Xerox Co., Ltd., Tokyo, JP;
Abstract
Provided is a light-emitting element including a semiconductor substrate, an island structure formed on the semiconductor substrate and including at least a current confining layer and p-type and n-type semiconductor layers, a light-emitting thyristor formed in the island structure and having a pnpn structure, and a shift thyristor formed in the island structure and having a pnpn structure, wherein the island structure includes a first side surface having a first depth such that the first side surface does not reach the current confining layer in a formation region of the shift thyristor and a second side surface having a second depth such that the second side surface reaches at least the current confining layer in a formation region of the light-emitting thyristor, and an oxidized region selectively oxidized from the second side surface is formed in the current confining layer in the formation region of the light-emitting thyristor.