The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 08, 2014
Filed:
Dec. 09, 2010
Masahiro Takata, Kanagawa-ken, JP;
Masashi Ono, Kanagawa-ken, JP;
Masayuki Suzuki, Kanagawa-ken, JP;
Atsushi Tanaka, Kanagawa-ken, JP;
Masahiro Takata, Kanagawa-ken, JP;
Masashi Ono, Kanagawa-ken, JP;
Masayuki Suzuki, Kanagawa-ken, JP;
Atsushi Tanaka, Kanagawa-ken, JP;
FUJIFILM Corporation, Tokyo, JP;
Abstract
A thin-film transistor including an oxide semiconductor layer is disclosed. The oxide semiconductor layer includes a first area, a second area and a third area forming a well-type potential in the film-thickness direction. The first area forms a well of the well-type potential and has a first electron affinity. The second area is disposed nearer to the gate electrode than the first area and has a second electron affinity smaller than the first electron affinity. The third area is disposed farther from the gate electrode than the first area and has a third electron affinity smaller than the first electron affinity. At least an oxygen concentration at the third area is lower than an oxygen concentration at the first area.