The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 08, 2014
Filed:
Mar. 26, 2012
Chongwu Zhou, Arcadia, CA (US);
Alexander Badmaev, Hillsboro, OR (US);
Chuan Wang, Albany, CA (US);
Yuchi Che, Los Angeles, CA (US);
Chongwu Zhou, Arcadia, CA (US);
Alexander Badmaev, Hillsboro, OR (US);
Chuan Wang, Albany, CA (US);
Yuchi Che, Los Angeles, CA (US);
University of Southern California, Los Angeles, CA (US);
Abstract
A high performance field-effect transistor includes a substrate, a nanomaterial thin film disposed on the substrate, a source electrode and a drain electrode formed on the nanomaterial thin film, and a channel area defined between the source electrode and the drain electrode. A unitary self-aligned gate electrode extends from the nanomaterial thin film in the channel area between the source electrode and the drain electrode, the gate electrode having an outer dielectric layer and including a foot region and a head region, the foot region in contact with a portion of the nanomaterial thin film in the channel area. A metal layer is disposed over the source electrode, the drain electrode, the head region of the gate electrode, and portions of the nanomaterial thin film proximate the source electrode and the drain electrode in the channel area.