The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 08, 2014
Filed:
Jul. 14, 2011
Yinyin Lin, Shanghai, CN;
Lingming Yang, Shanghai, CN;
Yinyin Lin, Shanghai, CN;
Lingming Yang, Shanghai, CN;
Fudan University, Shanghai, CN;
Abstract
The present invention relates to the technical field of memories, and in particular to a highly-consistent resistive memory and method of fabricating the same. The resistive memory comprises: a lower electrode which is formed in a first dielectric layer by patterning; a second dielectric layer formed on the lower electrode and the first dielectric layer and provided with an opening for exposing the lower electrode to perform patterning; an edge wall formed in the opening of the second dielectric layer for covering a border area of the lower electrode and the first dielectric layer so that only the middle area of the lower electrode is partially or totally exposed; a storage medium layer formed by performing oxidization with the second dielectric layer and the edge wall as mask; and an upper electrode. The resistive memory exhibits good consistency and high reliability; moreover, unit size is mall, which is advantageous for improving storage characteristic. When an array of memories is formed by the resistive memories, a good consistency is obtained among multiple resistive memories.