The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 08, 2014
Filed:
Aug. 28, 2012
Applicants:
Ji-won Moon, Gyeonggi-do, KR;
Moon-sig Joo, Gyeonggi-do, KR;
Sung-hoon Lee, Gyeonggi-do, KR;
Jung-nam Kim, Gyeonggi-do, KR;
Inventors:
Ji-Won Moon, Gyeonggi-do, KR;
Moon-Sig Joo, Gyeonggi-do, KR;
Sung-Hoon Lee, Gyeonggi-do, KR;
Jung-Nam Kim, Gyeonggi-do, KR;
Assignee:
SK Hynix Inc., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 47/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
A resistance variable memory device includes: a first electrode; a second electrode; a resistance variable layer interposed between the first electrode and the second electrode; and nano particles that are disposed in the resistance variable layer and have a lower dielectric constant than the resistance variable layer.