The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 08, 2014
Filed:
Apr. 06, 2010
Yvon Pellegrin, Frontignan, FR;
Yvon Pellegrin, Frontignan, FR;
SEMCO Engineering SA, Montpellier, FR;
Abstract
The object of the invention is a process for P-type boron doping of silicon wafers placed on a support in the chamber of a furnace of which one end comprises a wall in which means for introducing reactive gases and a gas carrying a boron precursor in gaseous form are located, whereby said process comprises the stages that consist in: a) In the chamber, reacting the reactive gases with boron trichloride BClthat is diluted in the carrier gas at a pressure of between 1 kPa and 30 kPa, and a temperature of between 800° C. and 1100° C., for forming a boron oxide BOglass layer, b) Carrying out the diffusion of atomic boron in silicon under an N+Oatmosphere at a pressure of between 1 kPa and 30 kPa. A furnace designed for the implementation of said doping process as well as its applications—the manufacturing of large boron-doped silicon slices, in particular for photovoltaic applications—is also claimed.