The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 08, 2014
Filed:
Nov. 25, 2009
Ali Afzali-ardakani, Yorktown Heights, NY (US);
Damon B. Farmer, Yorktown Heights, NY (US);
Lidija Sekaric, Mount Kisco, NY (US);
Ali Afzali-Ardakani, Yorktown Heights, NY (US);
Damon B. Farmer, Yorktown Heights, NY (US);
Lidija Sekaric, Mount Kisco, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A process of doping a silicon layer with dopant atoms generally includes reacting a vapor of a dopant precursor with oxide and/or hydroxide reactive sites present on the silicon layer to form a self assembled monolayer of dopant precursor; hydrolyzing the self assembled monolayer of the dopant precursor with water vapor to form pendant hydroxyl groups on the dopant precursor; capping the self assembled monolayer with an oxide layer; and annealing the silicon layer at a temperature effective to diffuse dopant atoms from the dopant precursor into the silicon layer. Additional monolayers can be formed in a similar manner, thereby providing controlled layer-by-layer vapor phase deposition of the dopant precursor compounds for controlled doping of silicon.