The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 08, 2014
Filed:
Sep. 17, 2013
Lockheed Martin Corporation, Bethesda, MD (US);
Kevin L. Robinson, Clay, NY (US);
Lockheed Martin Corporation, Bethesda, MD (US);
Abstract
Corona effect in a monolithic microwave integrated circuit (MMIC) is prevented by disposing a bottom metal layer on a substrate, defining a conductive via through the substrate electrically contacting the bottom metal layer, the conductive via further connected to a reference electrical potential, disposing a layer of dielectric material on a region of the bottom metal layer, forming a component metal layer over the conductive via and in electrical communication with the via and the bottom metal layer to define an electrical component, forming a top metal layer on the layer of dielectric material, the layer of dielectric layer interposed between the top metal layer and the bottom metal layer to thereby define an MMIC capacitor on the substrate, the top metal layer of the MMIC capacitor being separated from the electrical component, and disposing a passivation layer adjacent and conformal to a side wall of the top metal layer.