The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 08, 2014

Filed:

Aug. 07, 2013
Applicants:

Ahmed Elasser, Latham, NY (US);

Stephen Daley Arthur, Glenville, NY (US);

Alexey Vert, Clifton Park, NY (US);

Stanislav Ivanovich Soloviev, Ballston Lake, NY (US);

Peter Almern Losee, Clifton Park, NY (US);

Inventors:

Ahmed Elasser, Latham, NY (US);

Stephen Daley Arthur, Glenville, NY (US);

Alexey Vert, Clifton Park, NY (US);

Stanislav Ivanovich Soloviev, Ballston Lake, NY (US);

Peter Almern Losee, Clifton Park, NY (US);

Assignee:

General Electric Company, Niskayuna, NY (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/332 (2006.01);
U.S. Cl.
CPC ...
Abstract

A thyristor device includes a semiconductor body and a conductive anode. The semiconductor body has a plurality of doped layers forming a plurality of dopant junctions and includes an optical thyristor, a first amplifying thyristor, and a switching thyristor. The conductive anode is disposed on a first side of the semiconductor body. The optical thyristor is configured to receive incident radiation to generate a first electric current, and the first amplifying thyristor is configured to increase the first electric current from the optical thyristor to at least a threshold current. The switching thyristor switches to the conducting state in order to conduct a second electric current from the anode and through the semiconductor body.


Find Patent Forward Citations

Loading…