The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 01, 2014
Filed:
Jun. 18, 2009
Douglas Sudjian, Santa Clara, CA (US);
Douglas Sudjian, Santa Clara, CA (US);
QUALCOMM Incorporated, San Diego, CA (US);
Abstract
A detection circuit that can accurately detect signal peak is described. In an exemplary design, the detection circuit includes a bias voltage generator and a MOS transistor. The bias voltage generator provides a bias voltage as a function of temperature. The MOS transistor receives an input RF signal and the bias voltage and provides a rectified signal, which may be a linear function of the input RF signal and may have reduced deviation with temperature due to the bias voltage. The bias voltage generator may generate the bias voltage based on a temperature-dependent current having a slope selected to reduce deviation in the rectified signal with temperature. An offset canceller may cancel a reference voltage from the rectified signal and provide an output signal. A bulk bias generator may generate a bulk voltage for the bulk of the MOS transistor as a function of temperature to improve operating speed at higher temperature.