The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 01, 2014
Filed:
Jan. 17, 2012
Applicants:
Tuo-hung Hou, Hsinchu, TW;
Shih-chieh Wu, Hsinchu, TW;
Inventors:
Tuo-Hung Hou, Hsinchu, TW;
Shih-Chieh Wu, Hsinchu, TW;
Assignee:
National Chiao Tung University, Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 7/22 (2006.01);
U.S. Cl.
CPC ...
Abstract
This invention proposes a multi-bit resistive-switching memory cell and array thereof. Multiple conduction paths are formed on each memory cell and independent of each other, and each conduction path can be in a high-resistance or low-resistance state, so as to form a multi-bit resistive-switching memory cell. A memory cell array can be formed by arranging a plurality of multi-bit resistive-switching memory cells, and the memory cell array provides a simple, high density, high performance and cost-efficient proposal.