The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 01, 2014
Filed:
Jan. 12, 2012
Isao Hirota, Kanagawa, JP;
Kouichi Harada, Kanagawa, JP;
Nobuhiro Karasawa, Kanagawa, JP;
Yasushi Maruyama, Kanagawa, JP;
Yoshikazu Nitta, Tokyo, JP;
Hiroyuki Terakago, Kanagawa, JP;
Hajime Takashima, Kanagawa, JP;
Hideo Nomura, Kanagawa, JP;
Isao Hirota, Kanagawa, JP;
Kouichi Harada, Kanagawa, JP;
Nobuhiro Karasawa, Kanagawa, JP;
Yasushi Maruyama, Kanagawa, JP;
Yoshikazu Nitta, Tokyo, JP;
Hiroyuki Terakago, Kanagawa, JP;
Hajime Takashima, Kanagawa, JP;
Hideo Nomura, Kanagawa, JP;
Sony Corporation, , JP;
Abstract
A solid-state imaging device includes pixel cells that are formed on a substrate having a first substrate surface side, on which light is irradiated, and a second substrate surface side, on which elements are formed, and separated by an adjacent cell group and an element separation layer for each of the pixel cells or with plural pixel cells as a unit. Each of the pixel cells has a first conductive well formed on the first substrate surface side and a second conductive well formed on the second substrate surface side. The first conductive well receives light from the first substrate surface side and has a photoelectric conversion function and a charge accumulation function for the received light. A transistor that detects accumulated charges in the first conductive well and has a threshold modulation function is formed in the second conductive well.