The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 01, 2014
Filed:
Aug. 17, 2012
Mun-phil Park, Gyeonggi-do, KR;
Jung-hwan Lee, Gyeonggi-do, KR;
Mun-Phil Park, Gyeonggi-do, KR;
Jung-Hwan Lee, Gyeonggi-do, KR;
SK Hynix Inc., Gyeonggi-do, KR;
Abstract
A semiconductor device includes: a first driving voltage generation unit configured to generate a first driving voltage; a fuse unit coupled between an output node for receiving the first driving voltage and a fuse state sensing node; a driving unit configured to drive the fuse state sensing node with a second driving voltage in response to a control signal; a voltage level control unit configured to generate a voltage level control signal in response to a fuse state sensing signal that corresponds to a voltage level of the fuse state sensing node; and a second driving voltage generation unit configured to control and output a voltage level of the second driving voltage in response to the voltage level control signal. The semiconductor device repeatedly performs a rupture operation by monitoring a fuse state sensing signal.
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