The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 01, 2014
Filed:
Jan. 29, 2010
Yudai Takanishi, Osaka, JP;
Masao Moriguchi, Osaka, JP;
Yudai Takanishi, Osaka, JP;
Masao Moriguchi, Osaka, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
A semiconductor device of the present invention includes: a lower electrode (); a contact layer () including a first contact layer (), a second contact layer () and a third contact layer () overlapping with a semiconductor layer (); and an upper electrode () including a first upper electrode (), a second upper electrode () and a third upper electrode (). The second contact layer () includes a first region (), and a second region () separate from the first region (), and the second upper electrode () is directly in contact with the semiconductor layer () in a region between the first region () and the second region () of the second contact layer ().