The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 01, 2014
Filed:
Sep. 29, 2010
Masashi Shima, Yokohama, JP;
Masashi Shima, Yokohama, JP;
Fujitsu Semiconductor Limited, Yokohama, JP;
Abstract
A semiconductor device includes: a p-type active region; a gate electrode traversing the active region; an n-type LDD region having a first impurity concentration and formed from a drain side region to a region under the gate electrode; a p-type channel region having a second impurity concentration and formed from a source side region to a region under the gate electrode to form an overlap region with the LDD region under the gate electrode, the channel region being shallower than the LDD region; an n-type source region formed outside the gate electrode; and an n-type drain region having a third impurity concentration higher than the first impurity concentration formed outside and spaced from the gate electrode, wherein an n-type effective impurity concentration of an intermediate region between the gate electrode and the n-type drain region is higher than an n-type effective impurity concentration of the overlap region.