The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 01, 2014

Filed:

Mar. 02, 2011
Applicant:

Mueng-ryul Lee, Seoul, KR;

Inventor:

Mueng-Ryul Lee, Seoul, KR;

Assignee:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/76 (2006.01); H01L 29/66 (2006.01); H01L 31/101 (2006.01); H01L 31/113 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor device is provided. The semiconductor device includes a gate on a substrate, a source region at a first side of the gate, a first conductive type body region under the source region, a second conductive type drain region at a second side of the gate, a device isolation region in the substrate between the source region and the drain region and overlapping part of the gate, and a first buried layer extending in a direction from the source region to the drain region, the first buried layer under the body region, overlapping part of the device isolation region, and not overlapping the drain region.


Find Patent Forward Citations

Lee, Mueng-Ryul. (2014). Lateral double diffused mos device and method for manufacturing the same (U.S. Patent No. 8686498). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8686498

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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