The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 01, 2014
Filed:
Jun. 10, 2011
Renu Whig, Chandler, AZ (US);
Jon Slaughter, Tempe, AZ (US);
Nicholas Rizzo, Gilbert, AZ (US);
Jijun Sun, Chandler, AZ (US);
Frederick Mancoff, Chandler, AZ (US);
Dimitri Houssameddine, Chandler, AZ (US);
Renu Whig, Chandler, AZ (US);
Jon Slaughter, Tempe, AZ (US);
Nicholas Rizzo, Gilbert, AZ (US);
Jijun Sun, Chandler, AZ (US);
Frederick Mancoff, Chandler, AZ (US);
Dimitri Houssameddine, Chandler, AZ (US);
EverSpin Technologies, Inc., Chandler, AZ (US);
Abstract
A spin-torque magnetoresistive memory element has a high magnetoresistance and low current density. A free magnetic layer is positioned between first and second spin polarizers. A first tunnel barrier is positioned between the first spin polarizer and the free magnetic layer and a second tunnel barrier is positioned between the second spin polarizer and the free magnetic layer. The magnetoresistance ratio of the second tunnel barrier has a value greater than double the magnetoresistance ratio of the first tunnel barrier.