The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 01, 2014
Filed:
Apr. 06, 2011
Tsuyoshi Itoh, Osaka, JP;
Hiroshi Nakatsuji, Osaka, JP;
Masahiro Fujiwara, Osaka, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
Disclosed is a method for manufacturing a semiconductor device that can improve the performance of a photodiode that is formed on a same substrate as a thin film transistor without greatly deteriorating the productivity of the semiconductor device. On a glass substrate, a base layerhaving a recesson the surface is formed, and on the base layer, an amorphous silicon thin filmis formed. The amorphous silicon thin filmis melted to form a crystalline silicon thin film, while moving the molten silicon into the recess. Of the silicon thin film, a silicon filmthat constitutes a portion of a thin film transistoris formed of the silicon thin filmin a part other than the recess, while a silicon filmthat constitutes a portion of a photodiodeis formed of the silicon thin filmin the recess