The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 01, 2014
Filed:
Apr. 06, 2012
Toshiaki Ogawa, Anan, JP;
Hisashi Kasai, Anan, JP;
Masahiko Sano, Anan, JP;
Nichia Corporation, Anan-shi, JP;
Abstract
A semiconductor light emitting device includes first and second semiconductor layers, an active region, a transparent electrically-conducting layer, a reflecting structure, and a first electrode. The second semiconductor layer has a conductivity different from the first semiconductor layer. The active region is arranged between the first and second semiconductor layers. The transparent electrically-conducting layeris arranged on or above the first semiconductor layer. The reflecting structureis arranged on or above the transparent electrically-conducting layer. The first electrode is arranged on or above the reflecting structure, and electrically connected to the first semiconductor layer. The reflecting structureincludes at least a reflective layer. An intermediate layeris interposed between the transparent electrically-conducting layerand the reflecting structure. The intermediate layeris formed of a material containing an element with larger ionization tendency than the reflective layer