The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 01, 2014
Filed:
Sep. 07, 2011
Zhen Chen, Pleasanton, CA (US);
Zhen Chen, Pleasanton, CA (US);
Toshiba Techno Center Inc., Tokyo, JP;
Abstract
A buffer layer of zinc telluride (ZnTe) or titanium dioxide (TiO) is formed directly on a silicon substrate. Optionally, a layer of AlN is then formed as a second layer of the buffer layer. A template layer of GaN is then formed over the buffer layer. An epitaxial LED structure for a GaN-based blue LED is formed over the template layer, thereby forming a first multilayer structure. A conductive carrier is then bonded to the first multilayer structure. The silicon substrate and the buffer layer are then removed, thereby forming a second multilayer structure. Electrodes are formed on the second multilayer structure, and the structure is singulated to form blue LED devices.