The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 01, 2014
Filed:
May. 30, 2011
Yoichi Kawakami, Kyoto, JP;
Mitsuru Funato, Kyoto, JP;
Takao Oto, Kyoto, JP;
Ryan Ganipan Banal, Kyoto, JP;
Masanori Yamaguchi, Himeji, JP;
Ken Kataoka, Himeji, JP;
Hiroshige Hata, Himeji, JP;
Yoichi Kawakami, Kyoto, JP;
Mitsuru Funato, Kyoto, JP;
Takao Oto, Kyoto, JP;
Ryan Ganipan Banal, Kyoto, JP;
Masanori Yamaguchi, Himeji, JP;
Ken Kataoka, Himeji, JP;
Hiroshige Hata, Himeji, JP;
Kyoto University, Kyoto, JP;
Ushio Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
Provided is a compact ultraviolet irradiation apparatus which is capable of emitting ultraviolet radiation with high efficiency. This ultraviolet irradiation apparatus includes, in a vessel, a semiconductor multi-layered film element and an electron beam irradiation source for irradiating the semiconductor multi-layered film element with an electron beam, the vessel being hermetically sealed to have a negative internal pressure and having an ultraviolet transmitting window. Furthermore, the semiconductor multi-layered film element includes an active layer having a single quantum well structure or a multi quantum well structure of InAlGaN (0≦x<1, 0<y≦1, x+y≦1), and the active layer of the semiconductor multi-layered film element is irradiated with an electron beam from the electron beam irradiation source. This allows the semiconductor multi-layered film element to emit ultraviolet radiation out of the vessel through the ultraviolet transmitting window. Furthermore, Equation (1) below is satisfied,4.18×10.6×  Equation (1)where V (kV) is the acceleration voltage of the electron beam and t (nm) is the thickness of the active layer.