The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 01, 2014

Filed:

Sep. 12, 2012
Applicants:

Alejandro G. Schrott, New York, NY (US);

Chung H. Lam, Peekskill, NY (US);

Eric A. Joseph, White Plains, NY (US);

Matthew J. Breitwisch, Yorktown Heights, NY (US);

Roger W. Cheek, Somers, NY (US);

Inventors:

Alejandro G. Schrott, New York, NY (US);

Chung H. Lam, Peekskill, NY (US);

Eric A. Joseph, White Plains, NY (US);

Matthew J. Breitwisch, Yorktown Heights, NY (US);

Roger W. Cheek, Somers, NY (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 47/00 (2006.01); H01L 29/04 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method of manufacturing an electrode is provided that includes providing a pillar of a first phase change material atop a conductive structure of a dielectric layer; or the inverted structure; forming an insulating material atop dielectric layer and adjacent the pillar, wherein an upper surface of the first insulating material is coplanar with an upper surface of the pillar; recessing the upper surface of the pillar below the upper surface of the insulating material to provide a recessed cavity; and forming a second phase change material atop the recessed cavity and the upper surface of the insulating material, wherein the second phase change material has a greater phase resistivity than the first phase change material.


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