The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 01, 2014
Filed:
Jul. 12, 2012
Andreas Roelofs, Eden Prairie, MN (US);
Markus Siegert, Minneapolis, MN (US);
Venugopalan Vaithyanathan, Bloomington, MN (US);
Wei Tian, Bloomington, MN (US);
Yongchul Ahn, Eagan, MN (US);
Muralikrishnan Balakrishnan, Eden Prairie, MN (US);
Olle Heinonen, Eden Prairie, MN (US);
Andreas Roelofs, Eden Prairie, MN (US);
Markus Siegert, Minneapolis, MN (US);
Venugopalan Vaithyanathan, Bloomington, MN (US);
Wei Tian, Bloomington, MN (US);
Yongchul Ahn, Eagan, MN (US);
Muralikrishnan Balakrishnan, Eden Prairie, MN (US);
Olle Heinonen, Eden Prairie, MN (US);
Seagater Technology LLC, Cupertino, CA (US);
Abstract
A resistive sense memory cell includes a layer of crystalline praseodymium calcium manganese oxide and a layer of amorphous praseodymium calcium manganese oxide disposed on the layer of crystalline praseodymium calcium manganese oxide forming a resistive sense memory stack. A first and second electrode are separated by the resistive sense memory stack. The resistive sense memory cell can further include an oxygen diffusion barrier layer separating the layer of crystalline praseodymium calcium manganese oxide from the layer of amorphous praseodymium calcium manganese oxide a layer. Methods include depositing an amorphous praseodymium calcium manganese oxide disposed on the layer of crystalline praseodymium calcium manganese oxide forming a resistive sense memory stack.