The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8686384 B1

PDF
Full Text
Expired
Date of Patent:
Apr. 01, 2014

Filed:

Mar. 21, 2011
Applicants:

Kenji A{dot Over (O)}yama, Kanagawa-ken, JP;

Kazuhiko Yamamoto, Kanagawa-ken, JP;

Satoshi Ishikawa, Kanagawa-ken, JP;

Shigeto Oshino, Kanagawa-ken, JP;

Inventors:

Kenji A{dot over (o)}yama, Kanagawa-ken, JP;

Kazuhiko Yamamoto, Kanagawa-ken, JP;

Satoshi Ishikawa, Kanagawa-ken, JP;

Shigeto Oshino, Kanagawa-ken, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

According to one embodiment, a memory device includes a nanomaterial assembly layer, a first electrode layer and a second electrode layer. The nanomaterial assembly layer is formed of an assembly of a plurality of micro conductors via gaps between the micro conductors. The first electrode layer is provided on the nanomaterial assembly layer. The second electrode layer is provided on the first electrode layer.


Find Patent Forward Citations

A{dot over (o)}yama, Kenji. (2014). Memory device and method for manufacturing the same (U.S. Patent No. 8686384). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8686384

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