The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 01, 2014
Filed:
Jan. 23, 2012
Applicants:
Yoshinori Matsuno, Tokyo, JP;
Yoichiro Tarui, Tokyo, JP;
Inventors:
Yoshinori Matsuno, Tokyo, JP;
Yoichiro Tarui, Tokyo, JP;
Assignee:
Mitsubishi Electric Corporation, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/329 (2006.01);
U.S. Cl.
CPC ...
Abstract
A silicon oxide film is formed on an epitaxial layer by dry thermal oxidation, an ohmic electrode is formed on a back surface of a SiC substrate, an ohmic junction is formed between the ohmic electrode and the back surface of the SiC substrate by annealing the SiC substrate, the silicon oxide film is removed, and a Schottky electrode is formed on the epitaxial layer. Then, a sintering treatment is performed to form a Schottky junction between the Schottky electrode and the epitaxial layer.