The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 01, 2014
Filed:
Nov. 29, 2011
Applicants:
Taeyoon Lee, Seoul, KR;
Ja Hoon Koo, Seoul, KR;
Sang Wook Lee, Seoul, KR;
Ka Young Lee, Seoul, KR;
Inventors:
Assignee:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/306 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method for forming a silicon layer according to inventive concept comprises: preparing an SOI substrate; applying an etchant or vapor of the etchant to the SOI substrate; and irradiating a light to the SOI substrate.