The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 01, 2014
Filed:
Jan. 09, 2013
Fuji Electric Co., Ltd., Kawasaki, JP;
Hong-fei Lu, Matsumoto, JP;
Fuji Electric Co., Ltd., , JP;
Abstract
Mirror-polished CZ wafer and FZ wafer are prepared. A first impurity region which will be a first isolation region is formed in a surface layer of a first main surface of the CZ wafer. The first main surface of the CZ wafer and a first main surface of the FZ wafer are bonded to each other by an inter-molecular bond. A second impurity region which will be a second isolation region is formed in a surface layer of a second main surface of the FZ wafer. A heat treatment is performed to diffuse the first impurity region and the second impurity region such that the first impurity region and the second impurity region are continuous, thereby forming a through silicon isolation region.