The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 01, 2014
Filed:
Jul. 20, 2011
Octavi Escala Semonin, Eugene, OR (US);
Joseph M. Luther, Boulder, CO (US);
Matthew C. Beard, Arvada, CO (US);
Hsiang-yu Chen, Chungli, CN;
Octavi Escala Semonin, Eugene, OR (US);
Joseph M. Luther, Boulder, CO (US);
Matthew C. Beard, Arvada, CO (US);
Hsiang-Yu Chen, Chungli, CN;
Alliance for Sustainable Energy, LLC, Golden, CO (US);
Abstract
A method of forming an optoelectronic device. The method includes providing a deposition surface and contacting the deposition surface with a ligand exchange chemical and contacting the deposition surface with a quantum dot (QD) colloid. This initial process is repeated over one or more cycles to form an initial QD film on the deposition surface. The method further includes subsequently contacting the QD film with a secondary treatment chemical and optionally contacting the surface with additional QDs to form an enhanced QD layer exhibiting multiple exciton generation (MEG) upon absorption of high energy photons by the QD active layer. Devices having an enhanced QD active layer as described above are also disclosed.