The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 01, 2014

Filed:

Jul. 05, 2011
Applicants:

Christel Dieppedale, Crolles, FR;

Stephan Borel, Crolles, FR;

Bruno Reig, Moirans, FR;

Henri Sibuet, La Buisse, FR;

Inventors:

Christel Dieppedale, Crolles, FR;

Stephan Borel, Crolles, FR;

Bruno Reig, Moirans, FR;

Henri Sibuet, La Buisse, FR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); B81C 1/00 (2006.01); H01H 1/00 (2006.01);
U.S. Cl.
CPC ...
B81C 1/00158 (2013.01); B81C 1/00492 (2013.01); B81B 2201/018 (2013.01); B81B 2201/0264 (2013.01); B81B 2203/0118 (2013.01); B81B 2003/0361 (2013.01); B81C 2201/0178 (2013.01); H01H 1/0036 (2013.01);
Abstract

The fabrication of a semiconductor fixed structure defining a volume, for example of a MEMS micro electro-mechanical system includes, determining thicknesses beforehand depending on the functional distances associated with elements. At least one element is formed on a substrate by thermal oxidation of the substrate so as to form an oxide layer followed by selective etching of the oxide layer so as to define the volume in an etched portion by baring the underlying substrate so as to define the element in an unetched portion, and later oxidation of the substrate so as to form an oxide layer, in order to obtain the elements at the functional distances.


Find Patent Forward Citations

Loading…