The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 01, 2014
Filed:
Jan. 05, 2012
Dong Ju Lee, Gyeonggi-do, KR;
Heon Ho Lee, Gyeonggi-do, KR;
Hyun Wook Shim, Gyeonggi-do, KR;
Young Sun Kim, Gyeonggi-do, KR;
Dong Ju Lee, Gyeonggi-do, KR;
Heon Ho Lee, Gyeonggi-do, KR;
Hyun Wook Shim, Gyeonggi-do, KR;
Young Sun Kim, Gyeonggi-do, KR;
Samsung Electronics Co., Ltd., Seoul, KR;
Abstract
There is provided a method of manufacturing a light emitting diode and a light emitting diode manufactured by the same. The method includes growing a first conductivity type nitride semiconductor layer and an undoped nitride semiconductor layer on a substrate sequentially in a first reaction chamber; transferring the substrate having the first conductivity type nitride semiconductor layer and the undoped nitride semiconductor layer grown thereon to a second reaction chamber; growing an additional first conductivity type nitride semiconductor layer on the undoped nitride semiconductor layer in the second reaction chamber; growing an active layer on the additional first conductivity type nitride semiconductor layer; and growing a second conductivity type nitride semiconductor layer on the active layer.