The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 01, 2014

Filed:

Apr. 24, 2007
Applicants:

Alexander Raub, Danbury, CT (US);

Andrew Frauenglass, Albuquerque, NM (US);

Steven R. J. Brueck, Albuquerque, NM (US);

Inventors:

Alexander Raub, Danbury, CT (US);

Andrew Frauenglass, Albuquerque, NM (US);

Steven R. J. Brueck, Albuquerque, NM (US);

Assignee:

STC.UNM, Albuquerque, NM (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03H 1/26 (2006.01);
U.S. Cl.
CPC ...
Abstract

Exemplary embodiments provide methods for patterning large areas, beyond those accessible with the limited single-area exposure techniques, with nanometer scale features. The methods can include forming a grating pattern to make a first interferometric exposure of a first portion of a photosensitive material disposed over a substrate by interfering two or more laser beams, wherein the two or more laser beams comprise an apodized intensity profile having a continuous intensity variation. The method can further include aligning and overlapping the grating pattern to expose a second portion of the photosensitive material such that the first portion and the second portion form a continuous grating pattern.


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