The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 01, 2014
Filed:
Sep. 23, 2011
Jae-soon Lim, Seoul, KR;
Jae-hyoung Choi, Hwaseong-si, KR;
Youn-soo Kim, Yongin-si, KR;
Min-young Park, Seoul, KR;
Sang-yeol Kang, Seoul, KR;
Jae-Soon Lim, Seoul, KR;
Jae-Hyoung Choi, Hwaseong-si, KR;
Youn-Soo Kim, Yongin-si, KR;
Min-Young Park, Seoul, KR;
Sang-Yeol Kang, Seoul, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
A method of forming a metal thin film can reduce leakage current while improving electric properties by improving step coverage of a device. The method of forming a metal thin film includes supplying a metal precursor including chlorine, purging byproducts produced after the supplying of the metal precursor by injecting a purge gas, supplying a reactant to allow the reactant and the metal precursor to react with each other to form a thin film layer, and purging the byproducts produced after the reaction by injecting a purge gas, wherein before the supplying of the metal precursor, the method further includes supplying a reactant to be adsorbed on a treated product.