The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 01, 2014
Filed:
Nov. 06, 2012
Applicants:
Edward H Aifer, Arlington, VA (US);
Sergey I Maximenko, Alexandria, VA (US);
Inventors:
Edward H Aifer, Arlington, VA (US);
Sergey I Maximenko, Alexandria, VA (US);
Assignee:
The United States of America, as represented by the Secretary of the Navy, Washington, DC (US);
Primary Examiner:
Int. Cl.
CPC ...
C09K 13/08 (2006.01);
U.S. Cl.
CPC ...
Abstract
This disclosure involves a formula, mixing procedure, etching technique and application of an etchant for revealing defects in T2SL's grown lattice matched to (100) GaSb. The etching agent comprises a (2.5:4.5:16.5:280) solution by volume or (1%:2%:9%:88%) by weight, of HF:HO:HSO:HO. The etchant is made by mixing (49%) hydrofluoric aqueous solution with (30%) water-based peroxide, followed by sulfuric acid, and diluted with de-ionized H2O (DI-water).