The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 01, 2014
Filed:
Jan. 09, 2012
Seung Eon Moon, Daejeon, KR;
Jae Woo Lee, Daejeon, KR;
Nak Jin Choi, Daejeon, KR;
Hyung Kun Lee, Daejeon, KR;
Woo Seok Yang, Daejeon, KR;
Jong Dae Kim, Daejeon, KR;
Seung Eon Moon, Daejeon, KR;
Jae Woo Lee, Daejeon, KR;
Nak Jin Choi, Daejeon, KR;
Hyung Kun Lee, Daejeon, KR;
Woo Seok Yang, Daejeon, KR;
Jong Dae Kim, Daejeon, KR;
Electronics and Telecommunications Research Institute, Daejeon, KR;
Abstract
Disclosed are an MEMS type semiconductor gas sensor using a microheater having many holes and a method for manufacturing the same. The MEMS type semiconductor gas sensor includes: a substrate of which a central region is etched with a predetermined thickness; a second membrane formed at an upper portion of the central region of the substrate and having many holes; a heat emitting resistor formed on the second membrane and having many holes; a first membrane formed on the second membrane including the heat emitting resistor and having many holes; a sensing electrode formed on the first membrane and having many holes; and a sensing material formed on the sensing electrode.