The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 25, 2014
Filed:
Jan. 31, 2012
Masato Okamura, Minato-ku, JP;
Tetsuo Oosato, Minato-ku, JP;
Seiji Yamamoto, Minato-ku, JP;
Tadasu Yotsuyanagi, Minato-ku, JP;
Nagayoshi Ichikawa, Minato-ku, JP;
Kenji Yamazaki, Minato-ku, JP;
Junichi Takagi, Minato-ku, JP;
Hidehiro Urata, Minato-ku, JP;
Shunichi Suzuki, Chiyoda-ku, JP;
Kenro Takamori, Chiyoda-ku, JP;
Junichi Suzuki, Chiyoda-ku, JP;
Masato Okamura, Minato-ku, JP;
Tetsuo Oosato, Minato-ku, JP;
Seiji Yamamoto, Minato-ku, JP;
Tadasu Yotsuyanagi, Minato-ku, JP;
Nagayoshi Ichikawa, Minato-ku, JP;
Kenji Yamazaki, Minato-ku, JP;
Junichi Takagi, Minato-ku, JP;
Hidehiro Urata, Minato-ku, JP;
Shunichi Suzuki, Chiyoda-ku, JP;
Kenro Takamori, Chiyoda-ku, JP;
Junichi Suzuki, Chiyoda-ku, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
The Tokyo Electric Power Company, Incorporated, Tokyo, JP;
Abstract
In a nuclear power plant, a corrosion-resistant oxide film on a surface of the metal component of a reactor structure is exposed to a high-temperature water, the corrosion-resistant oxide film containing an oxide having a property of a P-type semiconductor, and a catalytic substance having a property of an N-type semiconductor is deposited on the oxide film. The oxide film maintains the property of the P-type semiconductor.