The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 25, 2014
Filed:
Dec. 16, 2009
Kiyohiro Kawasaki, Hirakata, JP;
Kiyohiro Kawasaki, Hirakata, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
According to the insulated gate transistor, a gate electrode (A) is provided on a main surface of a glass substrate (); a first part of an insulating layer (gate insulating layer () and transparent inorganic insulating layer ()) is thicker than a second part of the insulating layer (gate insulating layer ()), the first part being between (i) the gate electrode (A) and (ii) a source electrode () and a drain electrode () of the insulated gate transistor, and the second part being between (i) the gate electrode (A) and (ii) a channel section (A) of the insulated gate transistor. This makes it possible to reduce parasitic capacitor without deteriorating characteristics of the transistor.